| PART |
Description |
Maker |
| EMD12164P-60 EMD12164P-75 |
512M: 32M x 16 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| K4X51163PC-FE K4X51163PC-LE |
32M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| W3H32M72E-667ES W3H32M72E-667ESM W3H32M72E-667ESI |
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 32M × 72配置DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp.
Honeywell International, Inc.
|
| N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM
x8 SDRAM x8 SDRAM内存
x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co., Ltd.
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
